Apparatus and methods for variable capacitor arrays

ABSTRACT

Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of commonly-owned U.S. patentapplication Ser. No. 14/288,115, filed May 27, 2014, titled “APPARATUSAND METHODS FOR VARIABLE CAPACITOR ARRAYS”, which is acontinuation-in-part of commonly-owned U.S. patent application Ser. No.14/014,496, filed Aug. 30, 2013, titled “HIGH LINEARITY VARIABLECAPACITOR ARRAY”, which claims the benefit of priority under 35 U.S.C.§119(e) of U.S. Provisional Patent Application No. 61/857,446, filedJul. 23, 2013 titled “SIGNAL HANDLING APPARATUS FOR RADIO FREQUENCYCIRCUITS”, and of U.S. Provisional Patent Application No. 61/828,107,filed May 28, 2013 titled “TUNABLE PASSIVE FILTER COMPONENTS”, each ofwhich is hereby incorporated by reference in their entireties herein.

BACKGROUND

1. Field

Embodiments of the invention relate to electronic systems and, inparticular, to variable capacitor arrays for radio frequency (RF)circuits.

2. Description of the Related Technology

A capacitor can include a pair of conductors separated by a dielectric.When a voltage is applied between the pair of conductors, an electricfield can develop across the dielectric, which can lead to a store ofcharge in the capacitor. The capacitance of a capacitor corresponds to aratio of the charge stored to a voltage difference between theconductors. Other parameters, such as quality factor (Q), frequencyresponse, and/or linearity, can also be important in selecting acapacitor that is appropriate for a particular application.

Capacitors can be used in a variety of types of analog and radiofrequency (RF) circuits. For example, capacitors can be included infilters, duplexers, resonators, tuners, and/or other circuitry.

SUMMARY

In one aspect, an integrated circuit includes a first variable capacitorarray and a bias voltage generation circuit. The first variablecapacitor array includes a first plurality of metal oxide semiconductor(MOS) variable capacitor cells. The first plurality of MOS variablecapacitor cells includes a first MOS variable capacitor cell including afirst MOS capacitor and a second MOS capacitor. The first MOS capacitorand the second MOS capacitor are arranged in an anti-seriesconfiguration or in an anti-parallel configuration. The bias voltagegeneration circuit is configured to bias the first plurality of MOSvariable capacitor cells including the first MOS variable capacitor cellto control a capacitance of the first variable capacitor array.

In another aspect, a method of biasing a variable capacitor array isprovided. The method includes generating a first bias voltage using abias voltage generation circuit, selecting a voltage level from adiscrete number of two or more bias voltage levels based on a controlsignal, controlling the first bias voltage to the selected voltage levelusing the bias voltage generation circuit, and biasing a first metaloxide semiconductor (MOS) variable capacitor cell using the bias signal.The first MOS variable capacitor cell includes a first MOS capacitor anda second MOS capacitor arranged in an anti-series configuration or in ananti-parallel configuration. Biasing the first MOS variable capacitorcell using the first bias voltage includes applying the first biasvoltage between an anode and a cathode of the first MOS capacitor andapplying the first bias voltage between an anode and a cathode of thesecond MOS capacitor.

In another aspect, an apparatus is provided. The apparatus includes aradio frequency (RF) signal processing circuit including a plurality ofvariable capacitor arrays including a first variable capacitor array.The first variable capacitor array includes a first plurality of metaloxide semiconductor (MOS) variable capacitor cells, and the firstplurality of MOS variable capacitor cells includes a first MOS variablecapacitor cell comprising a first MOS capacitor and a second MOScapacitor. The first MOS capacitor and the second MOS capacitor arearranged in an anti-series configuration or in an anti-parallelconfiguration. The first variable capacitor array further includes abias voltage generation circuit configured to bias the first pluralityof MOS variable capacitor cells to control a capacitance of the firstvariable capacitor array.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of one embodiment of a radio frequency(RF) system.

FIG. 2 is a schematic diagram of a programmable filter according to oneembodiment.

FIG. 3A is a schematic diagram of one embodiment of an RF signalprocessing circuit.

FIG. 3B is a schematic diagram of another embodiment of an RF signalprocessing circuit.

FIG. 4 is a schematic diagram of an integrated circuit (IC) according toone embodiment.

FIGS. 5A and 5B are graphs of two examples of capacitance versus biasvoltage.

FIG. 6 is a schematic diagram of an IC according to another embodiment.

FIGS. 7A-7D show schematic diagrams of variable capacitor cellsaccording to various embodiments.

FIGS. 8A-8D show schematic diagrams of metal oxide semiconductor (MOS)variable capacitor cells according to various embodiments.

FIG. 9A is a schematic diagram of a MOS variable capacitor cellaccording to another embodiment.

FIG. 9B is a schematic diagram of a MOS variable capacitor cellaccording to another embodiment.

FIG. 10 is a schematic diagram of a MOS variable capacitor cellaccording to another embodiment.

FIG. 11A is a schematic diagram of an IC according to anotherembodiment.

FIG. 11B is a schematic diagram of an IC according to anotherembodiment.

FIG. 12 is a schematic diagram of a cross section of an IC according toone embodiment.

FIG. 13A is a cross section of a MOS capacitor according to oneembodiment.

FIG. 13B is a cross section of a MOS capacitor according to anotherembodiment.

DETAILED DESCRIPTION OF EMBODIMENTS

The following detailed description of certain embodiments presentsvarious descriptions of specific embodiments of the invention. However,the invention can be embodied in a multitude of different ways asdefined and covered by the claims. In this description, reference ismade to the drawings where like reference numerals may indicateidentical or functionally similar elements.

Apparatus and methods for variable capacitor arrays are provided herein.In certain configurations, an apparatus includes a variable capacitorarray and a bias voltage generation circuit. The variable capacitorarray can include a plurality of metal oxide semiconductor (MOS)variable capacitor cells, which include one or more pairs of MOScapacitors implemented in anti-parallel and/or anti-seriesconfigurations. In certain implementations, the MOS variable capacitorcells are electrically connected in parallel with one another between aradio frequency (RF) input and an RF output of the variable capacitorarray. The bias voltage generation circuit generates bias voltages forbiasing the MOS capacitors of the MOS variable capacitor cells.

A MOS capacitor can include a gate that operates as an anode, and asource and drain that are electrically connected to one another andoperate as a cathode. Additionally, a DC bias voltage between the MOScapacitor's anode and cathode can be used to control the MOS capacitor'scapacitance. In certain configurations, a MOS variable capacitor cellincludes one or more pairs of MOS capacitors implemented inanti-parallel and/or anti-series configurations. As used herein, a pairof MOS capacitors can be electrically connected in an anti-parallel orinverse parallel configuration in which an anode of the first MOScapacitor is electrically connected to a cathode of the second MOScapacitor, and a cathode of the first MOS capacitor is electricallyconnected to an anode of the second MOS capacitor. Additionally, a pairof MOS capacitors can be electrically connected in an anti-series orinverse series configuration in which the pair of MOS capacitors areelectrically connected in series with the first and second MOScapacitors' anodes electrically connected to one another or with thefirst and second MOS capacitors' cathodes electrically connected to oneanother. These configurations will be described in greater detail laterin connection with FIGS. 7A-7D.

In certain configurations, the bias voltage generation circuit can biasthe MOS capacitors of a particular MOS variable capacitor cell at avoltage level selected from discrete number of two or more bias voltagelevels associated with high linearity. Thus, rather than biasing the MOScapacitors at a bias voltage level selected from a continuous tuningvoltage range, the bias voltage generation circuit generates the MOScapacitors' bias voltages by selecting a particular cell's bias voltagelevel from a discrete set of bias voltage levels associated with highlinearity. In one embodiment, the bias voltage generation circuit biasesa particular MOS capacitor either at a first bias voltage levelassociated with an accumulation mode of the MOS capacitor or at a secondbias voltage level associated an inversion mode of the MOS capacitor.

As used herein and as persons having ordinary skill in the art willappreciate, the terms MOS capacitors or MOS variable capacitors refer toany types of capacitors made from insulated gates. These MOS capacitorsor MOS variable capacitors can have gates made from metals, such asaluminum, and dielectric regions made out of silicon oxide. However,these MOS capacitors or MOS variable capacitors can alternatively havegates made out of materials that are not metals, such as poly silicon,and can have dielectric regions implemented not just with silicon oxide,but with other dielectrics, such as high-k dielectrics.

In certain embodiments, a variable capacitor array omits any switches inthe signal path between the variable capacitor array's RF input and RFoutput. Switches can introduce insertion loss, degrade Q-factor, and/ordecrease linearity. Thus, rather than providing capacitance tuning byopening and closing switches to set a number of active capacitors from acapacitor bank, capacitance tuning can be provided by biasing MOScapacitors of the MOS variable capacitor cells at different bias voltagelevels to provide a desired overall capacitance of the variablecapacitor array. In certain configurations, the MOS variable capacitorscells of the variable capacitor array can have the same or differentweights or sizes, and the variable capacitor array's overall capacitanceis based on a linear combination of the capacitances of the MOS variablecapacitor cells.

The variable capacitor arrays disclosed herein can have a relativelysmall size, a relatively high Q, a relatively high linearity, and/or arelatively low insertion loss. Furthermore, in certain implementations,a variable capacitor array can provide sufficient tuning range toprovide filtering across a variety of different frequency bands.Accordingly, the variable capacitor array may be used to providefrequency tuning in a wide range of RF electronics, including, forexample, programmable filters, programmable resonators, programmableantenna tuners, programmable impedance matching networks, programmablephase shifters, and/or programmable duplexers.

FIG. 1 is a schematic diagram of one embodiment of a radio frequency(RF) system 10. The RF system 10 includes a programmable duplexer 1, anantenna 2, a receive terminal RX, and a transmit terminal TX. The RFsystem 10 can represent a portion of a wireless device, such as a smartphone. Accordingly, although not illustrated in FIG. 1 for clarity, theRF system 10 can include additional components and/or circuitry.

As shown in FIG. 1, the programmable duplexer 1 includes a firstprogrammable filter 3 and a second programmable filter 4. The firstprogrammable filter 3 includes an input electrically connected to theantenna 2 and an output electrically connected to the receive terminalRX. The first programmable filter 3 further includes a first variablecapacitor structure 5, which can be used to control a filteringcharacteristic of the first programmable filter 3, such as the locationin frequency of a passband. The second programmable filter 4 includes aninput electrically connected to the transmit terminal TX and an outputelectrically connected to the antenna 2. The second programmable filter4 further includes a second variable capacitor structure 6, which can beused to control a filtering characteristic of the second programmablefilter 4.

A wireless device such as a smart phone, tablet, or laptop computer cancommunicate over multiple frequency bands using one or more common orshared antennas. A desire to transmit at wider bandwidth and/or overdifferent communications networks has increased a demand for the numberof bands that a wireless device can communicate over. For example, awireless device may be specified to operate using one or more of avariety of communications standards including, for example, GSM/EDGE,IMT-2000 (3G), 4G, Long Term Evolution (LTE), Advanced LTE, IEEE 802.11(Wi-Fi), Mobile WiMAX, Near Field Communication (NFC), GlobalPositioning System (GPS), GLONASS, Galileo, Bluetooth, and the like.Proprietary standards can also be applicable. The complexities ofmulti-band communication can be further exacerbated in configurations inwhich the wireless device is specified to use carrier aggregation.

Certain conventional wireless devices can include a multi-throw switchand a duplexer associated with each of the frequency bands, and themulti-throw switch can be used to selectively couple an antenna to aduplexer associated with a particular band. The duplexers can provideband filtering using, for example, passive filtering structures, such asa surface acoustic wave (SAW) filters and/or thin film bulk acousticresonators (FBARs). The multi-throw switch can be used to electricallycouple the antenna to a duplexer associated with a frequency band thatthe wireless device is transmitting and/or receiving over at aparticular time instance.

In the illustrated configuration, the programmable duplexer 1 can beconfigured to filter a particular frequency band by programming thefirst and second programmable filters 3, 4 using a control signal CNTL.For example, in certain embodiments, the capacitance value of the firstvariable capacitor structure 5 can be controlled using the controlsignal CNTL to control a frequency location of a passband of the firstprogrammable filter 3, and the capacitance value of the second variablecapacitor structure 6 can be controlled using the control signal CNTL tocontrol a frequency location of a passband of the second programmablefilter 4.

Accordingly, the programmable duplexer 1 can be used to provide the RFsystem 10 with multi-band capability, while avoiding a need for using amulti-throw switch and a duplexer for each frequency band. Including theprogrammable duplexer 1 in the RF system 10 can reduce insertion loss intransmit and/or receive paths by eliminating a need for a multi-throwswitch. Furthermore, the programmable duplexer 1 can have smaller arearelative to a configuration including a multi-throw switch and multipleduplexers. Thus, a wireless device that includes the programmableduplexer 1 can have a smaller form factor and/or lower cost.

In the illustrated configuration, the capacitance values of the firstand second variable capacitor structures 5, 6 can be controlled usingthe control signal CNTL. In one embodiment, the control signal CNTL isreceived by the programmable duplexer 1 over an interface, such as aserial peripheral interface (SPI) or Mobile Industry Processor Interfaceradio frequency front end (MIPI RFFE) interface. Although two examplesof interfaces have been provided, other interfaces can be used. AlthoughFIG. 1 illustrates the first and second variable capacitor structures 5,6 as receiving a common control signal CNTL, other configurations arepossible, such as implementations in which the first and second variablecapacitor structures 5, 6 are controlled using separate control signals.

In certain configurations, the first variable capacitor structure 5and/or the second variable capacitor structure 6 are implemented usingone or more of the variable capacitor arrays described herein.

In one embodiment, the first and second variable capacitor structures 5,6 are implemented using variable capacitor arrays that include metaloxide semiconductor (MOS) capacitors, which can offer enhancedperformance over certain other tunable capacitance structures. Forinstance, certain microelectromechanical systems (MEMS) capacitors canexhibit low Q-factor, poor reliability, and/or limited tuning range.Additionally, other approaches such as coupled resonators can sufferfrom large size and/or cost, and thus can be unsuitable for certainapplications, including smart phones.

Although the RF system 10 illustrates one example of a system that caninclude one or more variable capacitor arrays, the variable capacitorarrays described herein can be used in other systems.

FIG. 2 is a schematic diagram of a programmable filter 20 according toone embodiment. The programmable filter 20 includes an input impedancetransformer 11, a splitter transformer 12, an RF signal processingcircuit 13, a combiner transformer 14, and an output impedancetransformer 15. The programmable filter 20 further includes an RF inputIN and an RF output OUT.

The programmable filter 20 illustrates one embodiment of a programmablefilter suitable for implementing the first and/or second programmablefilters 3, 4 shown in FIG. 1. However, the programmable filter 20 can beused in other systems and/or the first and/or second programmablefilters 3, 4 can be implemented in other ways.

The input impedance transformer 11 can receive an RF input signal on theRF input IN, and can generate an impedance transformed signal 21. Theinput impedance transformer 11 can provide an impedance transformationfrom input to output. For example, in one embodiment, the inputimpedance transformer 11 transforms an input impedance of about 50Ω toan output impedance of about R_(L), where R_(L) is less than 50Ω, forexample, 8Ω.

Transforming the input impedance of the programmable filter 20 in thismanner can result in the impedance transformed signal 21 having asmaller voltage level relative to a voltage level of the RF input signalreceived at the RF input IN. For example, when the programmable filter20 has an input impedance of about 50Ω, the voltage level of theimpedance transformed signal 21 can be smaller than the voltage level ofthe RF input signal by a factor of about √{square root over (50/R_(L))}.

The splitter transformer 12 can receive the impedance transformed signal21 from the input impedance transformer 11, and can generate N splitsignals, where N is an integer greater than or equal to 2. In theillustrated configuration, the splitter transformer 12 generates a firstsplit signal 22 a, a second split signal 22 b, and a third split signal22 c. Although an example with N=3 has been illustrated, the principlesand advantages disclosed herein are applicable to a broad range ofvalues for the integer N, including 2, 3, 4, 5, or 6 or more.

Splitting the impedance transformed signal 21 into N split signals canfurther decrease a voltage level of the RF input signal by a factor ofN. Including the splitter transformer 12 can also reduce the impedanceby a factor of N. For example, when the output impedance of the inputimpedance transformer 11 has a value of R_(L), the output impedance ofeach output of the splitter transformer 12 can have a value of R_(L)/N.

As shown in FIG. 2, the RF signal processing circuit 13 can receive thefirst, second, and third split signals 22 a-22 c, and can generatefirst, second, and third processed RF signals 23 a-23 c, respectively.As illustrated in FIG. 2, the RF signal processing circuit 13 includesvariable capacitor arrays 16, which can be used to control a filteringcharacteristic of the RF signal processing circuit 13. The RF signalprocessing circuit 13 further receives a control signal CNTL, which canbe used to control the capacitances of the variable capacitor arrays 16.

The illustrated RF signal processing circuit 13 can be used to processthe split signals 22 a-22 c generated by the splitter transformer 12 togenerate the processed signals 23 a-23 c, respectively. In certainconfigurations, the RF signal processing circuit 13 can includesubstantially identical circuitry in the signal paths between the RFsignal processing circuit's inputs and outputs.

The combiner transformer 14 receives the processed signals 23 a-23 c,which the combiner transformer 14 can combine to generate a combinedsignal 24. The combiner transformer 14 can also provide an impedancetransformation. For example, in a configuration in which each output ofthe RF signal processing circuit 13 has an output impedance of aboutR_(L)/N, the combiner transformer 14 can have an output impedance ofabout R_(L).

The output impedance transformer 15 receives the combined signal 24 fromthe combiner transformer 14, and generates the RF output signal on theRF output OUT. In certain configurations, the combiner transformer 14can have an output impedance R_(L) that is less than 50Ω, and the outputimpedance transformer 15 can be used to provide the RF output signal atan output impedance of about 50 Ω.

The illustrated programmable filter 20 provides filtering using the RFsignal processing circuit 13, which processes the split signals 22 a-22c at lower impedance relative to the programmable filter's inputimpedance. Thereafter, the processed signals 23 a-23 c are combined andtransformed up in impedance. For example, in one embodiment, theprogrammable filter's output impedance is about equal to theprogrammable filter's input impedance.

Configuring the programmable filter 20 to process an RF input signal inthis manner can increase the programmable filter's voltage handlingcapability. For example, when the programmable filter 20 has an inputimpedance of about 50Ω, the voltage level of the RF input signal can bedecreased by a factor of about N√{square root over (50/R_(L))} before itis provided to the RF signal processing circuit 13, which may includecircuitry that is sensitive to high voltage conditions. Accordingly, theillustrated programmable filter 20 can be used to process high voltageRF input signals and/or can have enhanced robustness to variations involtage standing wave ratio (VWSR).

Furthermore, configuring the programmable filter 20 to process the RFsignal at lower impedance can enhance the programmable filter'slinearity. -In one embodiment, the illustrated configuration can reducethe third-order inter-modulation distortion (IMD3) by a factor of about40 log₁₀ N√{square root over (50/R_(L))} relative to a configuration inwhich an RF input signal is provided directly to an RF signal processingcircuit without impedance transformation or splitting. In oneillustrative example, N can be selected to be equal to 8 and R_(L) canbe selected to be about equal to about 8Ω, and the programmable filtercan provide a linearity improvement of about 52 dB. However, otherconfigurations are possible.

FIG. 3A is a schematic diagram of one embodiment of an RF signalprocessing circuit 30. The RF signal processing circuit 30 includes afirst inductor-capacitor (LC) circuit 31 a, a second LC circuit 31 b, athird LC circuit 31 c, a fourth LC circuit 31 d, a fifth LC circuit 31e, a sixth LC circuit 31 f, a seventh LC circuit 31 g, an eighth LCcircuit 31 h, and a ninth LC circuit 31 i. The RF signal processingcircuit 30 illustrates one embodiment of the RF signal processingcircuit 13 of FIG. 2.

As shown in FIG. 3A, the first, second, and third LC circuits 31 a-31 care arranged in a cascade between a first RF input I₁ and a first RFoutput O₁. Additionally, the fourth, fifth, and sixth LC circuits 31d-31 f are arranged in a cascade between a second RF input I₂ and asecond RF output O₂. Furthermore, the seventh, eighth, and ninth LCcircuits 31 g-31 i are arranged in a cascade between a third RF input I₃and a third RF output O₃.

Although FIG. 3A illustrates a configuration including three RF inputsand three RF outputs, the RF signal processing circuit 30 can be adaptedto include more or fewer inputs and outputs.

The RF signal processing circuit 30 can be used to process RF inputsignals received on the first to third RF inputs I₁-I₃ to generate RFoutput signals on the first to third RF outputs O₁-O₃. As shown in FIG.3A, the RF signal processing circuit 30 receives a control signal CNTL,which can be used to control a variable capacitance associated with thefirst to ninth LC circuits 31 a-31 i. By controlling the LC circuits'capacitances, the control signal CNTL can be used to tune a frequencyresponse of the RF signal processing circuit 30.

In one embodiment, the RF signal processing circuit 30 is configured tooperate as a band pass filter, and the control signal CNTL can be usedto control a location in frequency of the band pass filter's passband.However, other configurations are possible.

Although FIG. 3A illustrates a configuration including three LC circuitsarranged in a cascade between each input and output, more or fewer LCcircuits and/or other processing circuitry can be included.

Cascading LC circuits can increase a voltage handling capability of anRF signal processing circuit by limiting a voltage drop acrossindividual circuit components of the LC circuits. For example, incertain implementations, the LC circuits 31 a-31 i are implemented usingMOS capacitors, which can be damaged by large gate-to-drain and/orgate-to-source voltages. By arranging two or more LC circuits in acascade, a voltage drop across the MOS capacitors during operation canbe increased relative to a configuration including a single LC circuitbetween a particular input and output.

The RF signal processing circuit 30 illustrates one embodiment of the RFsignal processing circuit 13 of FIG. 2. For example, in certainconfigurations, the first to third input RF inputs I₁-I₃ can receive thefirst to third RF split signals 22 a-22 c, respectively, and the firstto third RF outputs O₁-O₃ can generate the first to third processedsignals 23 a-23 c, respectively.

The RF signal processing circuit 30 includes a first signal path betweenthe first RF input I₁ and the first RF output O₁, a second signal pathbetween the second RF input I₂ and the second RF output O₂, and a thirdsignal path between the third RF input I₃ and the third RF output O₃. Incertain configurations, one or more electrical connections can beprovided between corresponding positions along the first to thirdsignals paths. For example, in certain implementations, the RF signalprocessing circuit 30 is used to process substantially identical RFinput signals received on the first to third RF inputs I₁-I₃,respectively, to generate substantially identical RF output signals onthe first to third RF outputs O₁-O₃. In such configurations, electricalconnections can be provided along corresponding positions of signalpaths, since the corresponding positions should have substantially thesame voltage level. Examples of such electrical connections areillustrated in FIG. 3A with dashed lines.

FIG. 3B is a schematic diagram of another embodiment of an RF signalprocessing circuit 40. The RF signal processing circuit 40 includes afirst LC circuit 41 a, a second LC circuit 41 b, a third LC circuit 41c, a fourth LC circuit 41 d, a fifth LC circuit 41 e, a sixth LC circuit41 f, a seventh LC circuit 41 g, an eighth LC circuit 41 h, and a ninthLC circuit 41 i.

The first to ninth LC circuits 41 a-41 i each include an input and anoutput. The first, second, and third LC circuits 41 a-41 c are arrangedin a cascade between the first RF input I₁ and the first RF output O₁.Additionally, the fourth, fifth, and sixth LC circuits 41 d-41 f arearranged in a cascade between the second RF input I₂ and second RFoutput O₂. Furthermore, the seventh, eighth, and ninth LC circuits arearranged in a cascade between the third RF input I₃ and the third RFoutput O₃.

The first LC circuit 41 a includes a first variable capacitor 43 a, asecond variable capacitor 44 a, a first inductor 45 a, a second inductor46 a, and a third inductor 47 a. The first variable capacitor 43 aincludes a first end electrically connected to the input of first LCcircuit 41 a, and a second end electrically connected to a first end ofthe first inductor 45 a. The first inductor 45 a further includes asecond end electrically connected to a first end of the second inductor46 a and to a first end of the third inductor 47 a. The second variablecapacitor 44 a includes a first end electrically connected to a secondend of the second inductor 46 a and a second end electrically connectedto a first voltage V₁, which can be, for example, a ground or power lowsupply. The third inductor 47 a further includes a second endelectrically connected to an output of the first LC circuit 41 a.

The second to ninth LC circuits 41 b-41 i include first variablecapacitors 43 b-43 i, second variable capacitors 44 b-44 i, firstinductors 45 b-45 i, second inductors 46 b-46 i, and third inductors 47b-47 i, respectively. Additional details of the second to ninth LCcircuits 41 b-41 i can be similar to those described above with respectto the first LC circuit 41 a.

The control signal CNTL can be used to control variable capacitances ofthe variable capacitors of the first to ninth LC circuits 41 a-41 i,thereby controlling a passband of the RF signal processing circuit 40.In certain implementations, an inductance of the first to ninth LCcircuits 41 a-41 i is substantially fixed or constant.

In certain configurations, all or part of the variable capacitors of anRF signal processing circuit are implemented using variable capacitorarrays fabricated on one or more integrated circuits. For example, asshown in FIG. 3B, in one embodiment, the first variable capacitor 43 a,the fourth variable capacitor 43 d, and the seventh variable capacitor44 g are fabricated as three variable capacitor arrays on a first IC 50.Additionally, the other variable capacitors shown in FIG. 3B can befabricated as variable capacitor arrays on the first IC 50 or on one ormore additional ICs. Although one example of implementing variablecapacitors as variable capacitor arrays has been described, otherconfigurations are possible.

FIG. 4 is a schematic diagram of an integrated circuit (IC) 60 accordingto one embodiment. The IC 60 includes a first variable capacitor array61, a second variable capacitor array 62, a third variable capacitorarray 63, and a bias voltage generation circuit 64. The IC 60 includes afirst RF input RF_(IN1), a second RF input RF_(N2), a third RF inputRF_(IN3), a first RF output RF_(OUT1), a second RF output RF_(OUT2), anda third RF output RF_(OUT3).

The first variable capacitor array 61 includes a first variablecapacitor cell 71 a, a second variable capacitor cell 71 b, and a thirdvariable capacitor cell 71 c. The first to third capacitors cells 71a-71 c are electrically connected in parallel between the first RF inputRF_(IN1) and the first RF output RF_(OUT1). The second variablecapacitor array 62 includes a first variable capacitor cell 72 a, asecond variable capacitor cell 72 b, and a third variable capacitor cell72 c. The first to third capacitors cells 72 a-72 c are electricallyconnected in parallel between the second RF input RF_(IN2) and thesecond RF output RF_(OUT2). The third variable capacitor array 63includes a first variable capacitor cell 73 a, a second variablecapacitor cell 73 b, and a third variable capacitor cell 73 c. The firstto third capacitors cells 73 a-73 c are electrically connected inparallel between the third RF input RF_(IN3) and the third RF outputRF_(OUT3).

Although FIG. 4 illustrates the IC 60 as including three variablecapacitor arrays, the IC 60 can be adapted to include more or fewervariable capacitor arrays. In other embodiments, the IC 60 can includebetween about 4 and about 16 variable capacitor arrays. However, otherconfigurations are possible.

Additionally, although FIG. 4 illustrates each variable capacitor arrayas including three variable capacitor cells, the variable capacitorarrays can be adapted to include more or fewer variable capacitor cells.In one embodiment the IC 60 includes between about 6 and about 12variable capacitor cells. However, a variable capacitor array can beadapted to include other numbers of variable capacitor cells.

The bias voltage generation circuit 64 receives the control signal CNTL,and generates a first bias voltage V_(BIAS1), a second bias voltageV_(BIAS2), and a third bias voltage V_(BIAS3). As shown in FIG. 4, thefirst bias voltage V_(BIAS1) is provided to the first variable capacitorcell 71 a of the first variable capacitor array 61, to the firstvariable capacitor cell 72 a of the second variable capacitor array 62,and to the first variable capacitor cell 73 a of the third variablecapacitor array 63. Additionally, the second bias voltage V_(BIAS2) isprovided to the second variable capacitor cell 71 b of the firstvariable capacitor array 61, to the second variable capacitor cell 72 bof the second variable capacitor array 62, and to the second variablecapacitor cell 73 b of the third variable capacitor array 63.Furthermore, the third bias voltage V_(BIAS3) is provided to the thirdvariable capacitor cell 71 c of the first variable capacitor array 61,to the third variable capacitor cell 72 c of the second variablecapacitor array 62, and to the third variable capacitor cell 73 c of thethird variable capacitor array 63.

The bias voltage generation circuit 64 can be used to control thevoltage levels of the first, second, and third bias voltagesV_(BIAS1)-V_(BIAS3) to control the capacitances of the first to thirdvariable capacitor arrays 61-63.

In one embodiment, the illustrated variable capacitor cells areimplemented using MOS transistors. Additionally, the first to third biasvoltages V_(BIAS1)-V_(BIAS3) can be used to bias the MOS transistors attwo or more bias voltages associated with a small amount of capacitancevariation, and thus with high linearity. For example, in one embodiment,the first to third bias voltages V_(BIAS1)-V_(BIAS3) can be controlledto bias the MOS capacitors in accumulation or inversion to control theoverall capacitance of the arrays.

In certain configurations, the MOS capacitors can be fabricated using acomplementary metal oxide semiconductor (CMOS) processes, such as deepsub-micron (DSM) CMOS processes. However, other configurations arepossible, including, for example, implementations in which the MOScapacitors are fabricated using silicon on insulator (SOI) processes.

In certain configurations herein, a variable capacitor cell can includeone or more pairs of MOS capacitors implemented using anti-paralleland/or anti-series configurations. Configuring a variable capacitor cellin this manner can help reduce a variation in the cell's capacitance inthe presence of RF signals.

As shown in FIG. 4, the bias voltage generation circuit 64 receives thecontrol signal CNTL, which can be used to select the voltage levels ofthe first, second, and third bias voltages V_(BIAS1)-V_(BIAS3). Incertain configurations, each of the variable capacitor arrays 61-63includes weighted banks of capacitors cells. For example, in oneembodiment, the first variable capacitor cell 71 a, the second variablecapacitor cell 71 b, and the third variable capacitor cell 71 c havedifferent capacitance weights or sizes. For example, the variablecapacitor cells of a particular variable capacitor array can increase insize by a scaling factor, such as 2.

The IC 60 includes a first signal path from the first RF input RF_(IN1)to the first RF output RF_(OUT1) through the first variable capacitorarray 61. Additionally, the IC 60 includes a second signal path from thesecond RF input RF_(IN2) to the second RF output RF_(OUT2) through thesecond variable capacitor array 62, and a third signal path from thethird RF input RF_(IN3) to the third RF output RF_(OUT3) through thethird variable capacitor array 63.

In certain embodiments, the IC 60 does not include any switches in thesignal paths between the IC's inputs and outputs through the variablecapacitor arrays. By configuring the variable capacitor arrays in thismanner, the variable capacitor arrays can have lower insertion lossand/or higher linearity relative to a configuration in which capacitanceis provided by selecting discrete capacitors via switches.

As shown in FIG. 4, multiple variable capacitor arrays can be fabricatedon a common IC, and can share control signals but receive different RFsignals. However, other configurations are possible, such asimplementations in which the variable capacitor arrays receive separatecontrol signals.

FIGS. 5A and 5B are graphs of two examples of capacitance versus biasvoltage. FIG. 5A includes a first graph 91 of capacitance versusvoltage, and FIG. 5B includes a second graph 92 of capacitance versusvoltage.

The first graph 91 includes a high frequency capacitance-voltage (CV)plot 93 for one example of an n-type MOS capacitor. As shown in the CVplot 93, the capacitance of the MOS capacitor can increase with biasvoltage level. The increase in capacitance can be associated with theMOS capacitor transitioning between operating regions or modes. Forexample, at low bias voltage levels, the MOS capacitor can operate in anaccumulation mode in which a majority carrier concentration near thegate dielectric/semiconductor interface is greater than a backgroundmajority carrier concentration of the semiconductor. Additionally, asthe voltage level of the bias voltage increases, the MOS capacitor cantransition from the accumulation mode to a depletion mode in whichminority and majority carrier concentrations near the gatedielectric/semiconductor interface are less than the background majoritycarrier concentration. Furthermore, as the voltage level of the biasvoltage further increases, the MOS capacitor can transition from thedepletion mode to an inversion mode in which the minority carrierconcentration near the gate dielectric/semiconductor interface isgreater than the background majority carrier concentration.

The first graph 91 has been annotated to include an AC signal component94 when biasing the MOS capacitor at a bias voltage level V_(B). Whenthe AC signal component 94 is not present, the MOS capacitor can have acapacitance C. However, as shown by in FIG. 5A, the AC signal component94 can generate a capacitance variation 95. The capacitance variation 95can be associated with a capacitance variation generated by the ACsignal component 94.

With reference to FIG. 5B, the second graph 92 includes the CV plot 93,which can be as described above. The second graph 92 has been annotatedto include a first AC signal component 96 associated with biasing theMOS capacitor at a first bias voltage level V_(B1), and a second ACsignal component 97 associated with biasing the MOS capacitor at asecond bias voltage level V_(B2).

As shown in FIG. 5B, the first AC signal component 96 can generate afirst capacitance variation 98, and the second AC signal component 97can generate a second capacitance variation 99.

When biased at the first bias voltage level V_(B1) or the second biasvoltage level V_(B2), the MOS capacitor can nevertheless have acapacitance that varies in the presence of AC signals. However, thefirst and second bias voltage levels V_(B1), V_(B2) can be associatedwith DC bias points of the MOS capacitor having relatively smallcapacitance variation or change.

Accordingly, in contrast to the capacitance variation 95 of FIG. 5Awhich has a relatively large magnitude, the first and second capacitancevariations 98, 99 of FIG. 5B have a relatively small magnitude.

In certain embodiments herein, a variable capacitor array includes MOScapacitors that are biased at bias voltages associated with smallcapacitance variation. By biasing the MOS capacitors in this manner, avariable capacitor array can exhibit high linearity.

Such a variable capacitor array can also have less capacitance variationwhen operated in a system using multiple frequency bands. For example,when included in a programmable duplexer, such as the programmableduplexer 1 of FIG. 1, the variable capacitor array can providerelatively constant capacitance even when tuned to frequency bands thatare separated by a wide frequency.

In certain embodiments, the first bias voltage level V_(B1) is selectedto operate in the MOS capacitor in an accumulation mode, and the secondbias voltage level V_(B2) is selected to operate the MOS capacitor in aninversion mode. In certain configurations, biasing a MOS capacitor inthis manner can achieve a capacitance tuning range of 3:1 or more.However, other tuning ranges can be realized, including, for example, atuning range associated with a particular manufacturing process used tofabricate the MOS capacitor.

FIG. 6 is a schematic diagram of an IC 100 according to anotherembodiment. The IC 100 includes a variable capacitor array 101 and abias voltage generation circuit 104. Although FIG. 6 illustrates aconfiguration in which the IC 100 includes one variable capacitor array,the IC 100 can be adapted to include additional variable capacitorarrays and/or other circuitry.

The variable capacitor array 101 includes a first MOS variable capacitorcell 111 a, a second MOS variable capacitor cell 111 b, and a third MOSvariable capacitor cell 111 c, which have been electrically connected inparallel between an RF input RF_(IN) and an RF output RF_(OUT). Althoughthe illustrated variable capacitor array 101 includes three MOS variablecapacitor cells, the variable capacitor array 101 can be adapted toinclude more or fewer MOS variable capacitor cells.

The bias voltage generation circuit 104 receives the control signalCNTL, and generates a first bias voltage 105 a for the first MOSvariable capacitor cell 111 a, a second bias voltage 105 b for thesecond MOS variable capacitor cell 111 b, and a third bias voltage 105 cfor the third MOS variable capacitor cell 111 c.

In the illustrated configuration, the control signal CNTL can be used toset the voltage level of the first bias voltage 105 a to a first biasvoltage level V_(B1) or to a second bias voltage level V_(B2).Similarly, the control signal CNTL can be used to set the voltage levelof the second bias voltage 105 b to the first bias voltage level V_(B1)or to the second bias voltage level V_(B2), and to set the voltage levelof the third bias voltage 105 c to the first bias voltage level V_(B1)or to the second bias voltage level V_(B2).

By controlling the voltage levels of the bias voltages to the first orsecond bias voltage levels V_(B1), V_(B2), the variable capacitor array101 can exhibit a small variation in capacitance in the presence of anRF signal at the RF input RF_(IN). Accordingly, the variable capacitorarray 101 can exhibit high linearity in the presence of RF signals.

The control signal CNTL can control an overall capacitance of thevariable capacitor array 101. For example, the size of the first,second, and third MOS capacitors cells 111 a-111 c can be weightedrelative to one another, and an overall capacitance of the variablecapacitor array 101 can be based on a sum of the capacitances of thearray's MOS variable capacitor cells.

In one embodiment, the variable capacitor array's MOS variable capacitorcells are scaled by a factor of 2. For example, a second MOS variablecapacitor cell of the variable capacitor array can have a size that isabout a factor of 2 relative to a first MOS variable capacitor cell ofthe variable capacitor array. Additionally, an nth MOS variablecapacitor cell in the array can have a size that is about 2^(n-1) thatof the first MOS variable capacitor cell, where n is an integer greaterthan or equal to 2. Although one possible variable capacitor arraysizing scheme has been described, other configurations are possible.

When a variable capacitor array includes n MOS variable capacitor cellsthat are scaled by a factor of 2 relative to one another, the biasvoltage generation circuit 104 can control the array's first MOSvariable capacitor cell to a capacitance of C₁ or C₂ by biasing thefirst MOS variable capacitor cell with the first bias voltage levelV_(B1) or the second bias voltage level V_(B2). Additionally, the biasvoltage generation circuit 104 can control the array's second MOSvariable capacitor cell to a capacitance of 2¹*C₁ or 2¹*C₂ by biasingthe second MOS variable capacitor cell with the first bias voltage levelV_(B1) or the second bias voltage level V_(B2). Furthermore, the biasvoltage generation circuit 104 can control the array's nth MOS variablecapacitor cell to a capacitance of 2^(n-1)*C₁ or 2^(n-1)*C₂ by biasingthe nth MOS variable capacitor cell with the first bias voltage levelV_(B1) or the second bias voltage level V_(B2).

Configuring the bias voltage generation circuit 104 to control a biasvoltage to one of two voltage levels can simplify a coding schemeassociated with the control signal CNTL. For example, in such aconfiguration, the control signal CNTL can comprise a digital controlsignal, and individual bits of the digital control signal can be used tocontrol the array's bias voltages to a particular bias voltage level.Although one possible coding scheme of the control signal CNTL has beendescribed, other configurations are possible.

FIGS. 7A-7D show schematic diagrams of variable capacitor cellsaccording to various embodiments. The variable capacitor cells of FIGS.7A-7D can be used in any of the variable capacitor arrays describedherein.

FIG. 7A is a schematic diagram of a variable capacitor cell 120according to one embodiment. The variable capacitor cell 120 includes afirst variable capacitor 121 and a second variable capacitor 122. Thevariable capacitor cell 120 further includes an RF input RF_(IN) and anRF output RF_(OUT).

The first variable capacitor 121 includes an anode electricallyconnected to the RF input RF_(IN) and a cathode electrically connectedto the RF output RF_(OUT). The second variable capacitor 122 includes ananode electrically connected to the RF output RF_(OUT) and a cathodeelectrically connected to the RF input RF_(IN).

In the illustrated configuration, an anode structure of the first andsecond variable capacitors 121, 122 is different than a cathodestructure of the first and second variable capacitors 121, 122. Forexample, the first and second variable capacitors 121, 122 can beimplemented by first and second MOS capacitors, respectively.Additionally, the first and second MOS capacitors can have anodesassociated with transistor gates and cathodes associated with transistorsource and/or drain regions.

The first and second variable capacitors 121, 122 have been implementedin an anti-parallel or inverse parallel configuration. Electricallyconnecting the first and second variable capacitors 121, 122 in thismanner can enhance the robustness of the capacitors to capacitancevariation in the presence of RF signals. For example, when the first andsecond variable capacitors are each biased with a particular biasvoltage, the variable capacitors' capacitance may change when an RFinput signal is received on the RF input RF_(IN). However, a capacitancevariation ΔC of the first and second variable capacitors 121, 122 canhave about equal magnitude, but opposite polarity. For instance, in thepresence of an RF input signal that generates a capacitance variationhaving a magnitude ΔC, the first variable capacitor 121 may have acapacitance C_(V)+ΔC, while the second variable capacitor 122 may have acapacitance C_(V)−ΔC. Since the first and second variable capacitors121, 122 are electrically connected in parallel with one another, anoverall capacitance of the first and second variable capacitors 121, 122can be about equal to 2*C_(V).

Accordingly, the illustrated configuration can provide reducedcapacitance variation in the presence of RF signals. Furthermore, theillustrated variable capacitor cell 120 can exhibit high linearity.

FIG. 7B is a schematic diagram of a variable capacitor cell 130according to one embodiment. The variable capacitor cell 130 includesthe first and second variable capacitors 121, 122.

The variable capacitor cell 130 of FIG. 7B is similar to the variablecapacitor cell 120 of FIG. 7A, except that the variable capacitor cell130 includes a different arrangement of the first and second variablecapacitors 121, 122. In particular, in contrast to the variablecapacitor cell 120 of FIG. 7A which implements the first and secondvariable capacitors 121, 122 in an anti-parallel configuration, thevariable capacitor cell 130 of FIG. 7B implements the first and secondvariable capacitors 121, 122 in an anti-series or inverse seriesconfiguration.

For example, the first variable capacitor 121 includes an anodeelectrically connected to the RF input RF_(IN), and a cathodeelectrically connected to a cathode of the second variable capacitor122. Additionally, the second variable capacitor 122 further includes ananode electrically connected to the RF output RF_(OUT).

Configuring the variable capacitor cell 130 in this manner can reducevariation of the cell's capacitance in the presence of an RF inputsignal at the RF input RF_(IN).

Although the variable capacitor cell 130 of FIG. 7B can have a smallercapacitance relative to the variable capacitor cell 120 of FIG. 7A for agiven bias voltage level, the variable capacitor cell 130 of FIG. 7B canhave a higher voltage handling capability relative to the variablecapacitor cell 120 of FIG. 7A.

FIG. 7C is a schematic diagram of a variable capacitor cell 140according to another embodiment. The variable capacitor cell 140includes the first and second variable capacitors 121, 122.

The variable capacitor cell 140 of FIG. 7C is similar to the variablecapacitor cell 130 of FIG. 7B, except that the variable capacitor cell140 illustrates a different anti-series configuration of the first andsecond variable capacitors 121, 122. In particular, in contrast to thevariable capacitor cell 130 of FIG. 7B in which the cathodes of thefirst and second variable capacitors 121, 122 are electrically connectedto one another, the variable capacitor cell 140 of FIG. 7C illustrates aconfiguration in which the anodes of the first and second variablecapacitors 121, 122 are electrically connected to one another.

In certain configurations, the variable capacitor cell 140 of FIG. 7Ccan be more robust against damage from electrostatic discharge (ESD)events relative to the variable capacitor cell 130 of FIG. 7B.

For example, the RF input RF_(IN) and RF output RF_(OUT) of the variablecapacitor cell 140 may be electrically connected to input and outputpins of an IC on which the variable capacitor cell 140 is fabricated.Additionally, the first and second variable capacitors 121, 122 can beimplemented using MOS capacitors, which can include a gate that operatesas an anode and a source and drain that are electrically connected toone another and operate as a cathode. Since a MOS capacitor's source anddrain regions typically can withstand a greater voltage relative to theMOS capacitor's gate region, the variable capacitor cell 140 of FIG. 7Cmay exhibit a greater robustness to ESD events or other overvoltageconditions relative to the variable capacitor cell 130 of FIG. 7B.

FIG. 7D is a schematic diagram of a variable capacitor cell 150according to another embodiment. The variable capacitor cell 150includes the first and second variable capacitors 121, 122, which havebeen arranged in the anti-series configuration shown in FIG. 7B. Thevariable capacitor cell 150 further includes a third variable capacitor123 and a fourth variable capacitor 124, which have been arranged in theanti-series configuration shown in FIG. 7C.

As shown in FIG. 7D, certain variable capacitor cells can include acombination of variable capacitors arranged in anti-series and/oranti-parallel configurations. The variable capacitor cell 150illustrates one example of such a combination. However, otherconfigurations are possible.

FIGS. 8A-8D show schematic diagrams of MOS variable capacitor cellsaccording to various embodiments. The MOS variable capacitor cells ofFIGS. 8A-8D can be used in any of the variable capacitor arraysdescribed herein.

FIG. 8A is a schematic diagram of a MOS variable capacitor cell 160according to one embodiment. The MOS variable capacitor cell 160includes a first DC blocking capacitor 161, a second DC blockingcapacitor 162, a third DC blocking capacitor 163, a fourth DC blockingcapacitor 164, a first MOS capacitor 171, and a second MOS capacitor172. The MOS variable capacitor cell 160 further includes an RF inputRF_(IN) and an RF output RF_(OUT).

Electrical connections between the MOS variable capacitor cell 160 and abias voltage generation circuit 175 have been illustrated in FIG. 8A.Although not illustrated in FIG. 8A, the bias voltage generation circuit175 can be used to bias additional MOS variable capacitor cells.

The first DC blocking capacitor 161 (C_(DCBLOCK1)) is electricallyconnected between the RF input RF_(IN) and a gate of the first MOScapacitor 171. Additionally, the second DC blocking capacitor 162(C_(DCBLOCK2)) is electrically connected between the RF output RF_(OUT)and a source and drain of the first MOS capacitor 171. Furthermore, thethird DC blocking capacitor 163 (C_(DCBLOCK3)) is electrically connectedbetween the RF input RF_(IN) and a source and drain of the second MOScapacitor 172. Additionally, the fourth DC blocking capacitor 164(C_(DCBLOCK4)) is electrically connected between the RF output RF_(OUT)and a gate of the second MOS capacitor 172.

As shown in FIG. 8A, the bias voltage generation circuit 175 can be usedto bias the first and second MOS capacitors 171, 172 at a first biasvoltage level V_(B1) or at a second bias voltage level V_(B2). In oneembodiment, the first and second MOS capacitors 171, 172 operate inaccumulation when biased at the first bias voltage level V_(B1) andoperate in inversion when biased at the second bias voltage levelV_(B2).

Biasing the first and second MOS capacitors 171, 172 in this manner canimprove linearity relative to a configuration in which the first andsecond MOS capacitors 171, 172 are biased at a bias voltage levelselected from a continuous tuning voltage range. For example, a MOScapacitor can exhibit a change in capacitance in response to changes inan applied RF signal, and a magnitude of the capacitance change can varywith the MOS capacitor's bias voltage level.

FIG. 8B is a schematic diagram of a MOS variable capacitor cell 170according to another embodiment. The MOS variable capacitor cell 170includes the first and second DC blocking capacitors 161, 162 and thefirst and second MOS capacitors 171, 172. Electrical connections betweenthe MOS variable capacitor cell 170 and the bias voltage generationcircuit 175 have been illustrated in FIG. 8B.

The MOS variable capacitor cell 170 of FIG. 8B is similar to the MOSvariable capacitor cell 160 of FIG. 8A, except that the MOS variablecapacitor cell 170 of FIG. 8B implements the first and second MOScapacitors 171, 172 in an anti-series configuration, rather than in ananti-parallel configuration.

For example, in the illustrated configuration, the first DC blockingcapacitor 161 (C_(DCBLOCK1)) is electrically connected between the RFinput RF_(IN) and the gate of the first MOS capacitor 171. Additionally,the source and drain of the first MOS capacitor 171 are electricallyconnected to the source and drain of the second MOS capacitor 172.Furthermore, the second DC blocking capacitor 162 (C_(DCBLOCK2)) iselectrically connected between the RF output RF_(OUT) and the gate ofthe second MOS capacitor 172. As shown in FIG. 8B, the bias voltagegeneration circuit 175 can be used to bias the first and second MOScapacitors 171, 172 at the first bias voltage level V_(B1) or at thesecond bias voltage level V_(B2).

FIG. 8C is a schematic diagram of a MOS variable capacitor cell 180according to another embodiment. The MOS variable capacitor cell 180includes the first and second DC blocking capacitors 161, 162 and thefirst and second MOS capacitors 171, 172. Electrical connections betweenthe MOS variable capacitor cell 180 and the bias voltage generationcircuit 175 have been illustrated in FIG. 8C.

The MOS variable capacitor cell 180 of FIG. 8C is similar to the MOSvariable capacitor cell 170 of FIG. 8B, except that the MOS variablecapacitor cell 180 illustrates a different anti-series configuration ofthe first and second MOS capacitors 171, 172 relative to the anti-seriesconfiguration shown in FIG. 8B. In particular, in contrast to the MOSvariable capacitor cell 170 of FIG. 8B in which the sources/drains ofthe first and second MOS capacitors 181, 182 are electrically connectedto one another, the MOS variable capacitor cell 180 of FIG. 8Cillustrates a configuration in which the gates of the first and secondMOS capacitors 171, 172 are electrically connected to one another.

For example, in the illustrated configuration, the first DC blockingcapacitor 161 (C_(DCBLOCK1)) is electrically connected between the RFinput RF_(IN) and the source and drain of the first MOS capacitor 171.Additionally, the gate of the first MOS capacitor 171 is electricallyconnected to the gate of the second MOS capacitor 172. Furthermore, thesecond DC blocking capacitor 162 (C_(DCBLOCK2)) is electricallyconnected between the RF output RF_(OUT) and the source and drain of thesecond MOS capacitor 172. As shown in FIG. 8C, the bias voltagegeneration circuit 175 can be used to bias the first and second MOScapacitors 171, 172 at the first bias voltage level V_(B1) or at thesecond bias voltage level V_(B2).

In certain configurations, the MOS variable capacitor cell 180 of FIG.8C can be more robust against damage from ESD events relative to the MOSvariable capacitor cell 170 of FIG. 8B. For example, the RF inputRF_(IN) and the RF output RF_(OUT) may be electrically connected toinput and output pins of an IC, and the MOS capacitors' source and drainregions may be capable of withstanding higher voltages relative to theMOS capacitors' gate regions.

FIG. 8D is a schematic diagram of a MOS variable capacitor cell 190according to another embodiment. The MOS variable capacitor cell 190includes the first and second DC blocking capacitors 161, 162 and thefirst and second MOS capacitors 171, 172, which have been arranged inthe anti-series configuration shown in FIG. 8B. The MOS variablecapacitor cell 190 further includes a third DC blocking capacitor 163(C_(DCBLOCK3)), a fourth DC blocking capacitor 164 (C_(DCBLOCK4)), athird MOS capacitor 173, and a fourth MOS capacitor 174, which have beenarranged in the anti-series configuration shown in FIG. 8C. Electricalconnections between the MOS variable capacitor cell 190 and a biasvoltage generation circuit 195 have been illustrated in FIG. 8D.

As shown in FIG. 8D, certain MOS variable capacitor cells can include acombination of MOS capacitors arranged in anti-series and/oranti-parallel configurations. The MOS variable capacitor cell 190illustrates one example of such a combination. However, otherconfigurations are possible.

FIG. 9A is a schematic diagram of a MOS variable capacitor cell 200according to another embodiment. The MOS variable capacitor cell 200includes a pair of MOS capacitors 201 and a balancing resistor 202(R_(BALANcE)). Although not illustrated in FIG. 9A for clarity, the pairof MOS capacitors 201 can receive one or more bias voltages forcontrolling capacitance.

As shown in FIG. 9A, pair of MOS capacitors 201 includes an inputelectrically connected to an RF input RF_(IN) and an output electricallyconnected to an RF output RF_(OUT). Additionally, the balancing resistor202 includes a first end electrically connected to the RF input RF_(IN)and a second end electrically connected to the RF output RF_(OUT). Incertain configurations, the pair of MOS capacitors 201 can include afirst MOS capacitor and a second MOS capacitor implemented in ananti-parallel configuration or in an anti-series configuration.

Including the balancing resistor 202 can aid in improving the linearityof the MOS variable capacitor cell 200. For example, the balancingresistor 202 can enhance third-order intermodulation distortion (IMD3)relative to a configuration in which the balancing resistor 202 isomitted. However, the balancing resistor 202 may also degrade Q-factor.Accordingly, the balancing resistor 202 can be included or excludedand/or have a resistance selected to achieve a desired balance betweenlinearity and Q-factor.

Additional details of the MOS variable capacitor cell 200 can be similarto those described earlier.

FIG. 9B is a schematic diagram of a MOS variable capacitor cell 210according to another embodiment. The MOS variable capacitor cell 210includes the first and second DC blocking capacitors 161, 162, the firstand second MOS capacitors 171, 172, and the balancing resistor 202.Electrical connections between the MOS variable capacitor cell 210 andthe bias voltage generation circuit 175 have been illustrated in FIG.9B.

The MOS variable capacitor cell 210 of FIG. 9B is similar to the MOSvariable capacitor cell 170 of FIG. 8B, except that the MOS variablecapacitor cell 210 of FIG. 9B further includes the balancing resistor202. As shown in FIG. 9B, the balancing resistor 202 includes a firstend electrically connected to a gate of the first MOS capacitor 171 anda second end electrically connected to a gate of the second MOScapacitor 172.

The balancing resistor 202 can aid in improving the linearity of the MOSvariable capacitor cell 210 relative to the MOS variable capacitor cell170 of FIG. 8B. However, including the balancing resistor 202 can alsodegrade the cell's Q-factor.

Although FIG. 9B illustrates the balancing resistor 202 in the contextof MOS capacitors arranged in an anti-series configuration, one or morebalancing resistors can be used in a MOS variable capacitor cell thatincludes MOS capacitors arranged in other ways. For example, one or morebalancing resistors can be included in any of the MOS variable capacitorcells shown in FIGS. 8A-8D.

Additional details of the MOS variable capacitor cell 210 can be similarto those described earlier.

FIG. 10 is a schematic diagram of a MOS variable capacitor cell 220according to another embodiment. The MOS variable capacitor cell 220includes a first pair of MOS capacitors 201 a, a second pair of MOScapacitors 201 b, and a third pair of MOS capacitors 201 c.

Although the MOS variable capacitor cell 220 is illustrated as includingthree pairs of MOS capacitors, the teachings herein are applicable toconfigurations including more or fewer MOS capacitors. Additionally,although not illustrated in FIG. 10 for clarity, the pairs of MOScapacitors 201 a-201 c can receive one or more bias voltages forcontrolling capacitance.

In the illustrated configuration, the first pair of MOS capacitors 201a, the second pair of MOS capacitors 201 b, and the third pair of MOScapacitors 201 c have been arranged in between an RF input RF_(IN) andan RF output RF_(OUT). Arranging one or more pairs of MOS capacitors ina cascade can increase a voltage handling capability of the MOS variablecapacitor cell.

In certain implementations, the first pair of MOS capacitors 201 a, thesecond pair of MOS capacitors 201 b, and the third pair of MOScapacitors 201 c includes pairs of MOS capacitors arranged in ananti-parallel configuration, an anti-series configuration, or acombination thereof.

Additional details of the MOS variable capacitor cell 220 can be similarto those described earlier.

FIG. 11A is a schematic diagram of an IC 250 according to anotherembodiment. The IC 250 includes the variable capacitor array 101 and thebias voltage generation circuit 104, which can be as described earlierwith respect to FIG. 6. The IC 250 further includes a capacitancecorrection circuit 251. Although the illustrated IC 250 includes onevariable capacitor array, the IC 250 can be adapted to includeadditional variable capacitor arrays and/or other circuitry.

The capacitance correction circuit 251 receives a control signal CTNLand a band signal BAND, and generates an adjusted control signal 253.The bias voltage generation circuit 104 can use the adjusted controlsignal 253 to control the capacitance of the variable capacitor array101.

The capacitance correction circuit 251 can generate the adjusted controlsignal 253 by correcting the control signal CNTL based on a frequencyband indicated by the band signal BAND. The capacitance correctioncircuit 251 includes a band adjustment circuit 252, which can use theband signal BAND to determine a correction or adjustment of thecapacitance correction circuit 251. In one embodiment, the capacitancecorrection circuit 251 comprises a programmable memory that can beprogrammed to include band adjustment data. For example, the bandadjustment data can represent a table of frequency bands and associatedadjustments.

In certain configurations, the variable capacitor array 101 can beincluded in a programmable duplexer, a programmable RF filter, and/orother RF circuitry that operates across multiple frequency bands. Forexample, the variable capacitor array 101 can be included in anapplication in which the RF input RF_(IN) can receive an RF signalassociated with one of multiple frequency bands, including, but notlimited to, Universal Mobile Telecommunications System (UMTS) Band II,Band IV, Band V, Band XII, or Band XIII Although specific examples offrequency bands have been described above, the teachings herein areapplicable to a wide range of frequency bands.

Including the capacitance correction circuit 251 can aid in improvingthe performance of the variable capacitor array 101 in multi-bandconfigurations. For example, high frequency effects can result in avariation of the variable capacitor array's capacitance in the presenceof an RF input signals of different frequencies. Additionally, thecapacitance correction circuit's band adjustment circuit 252 can be usedto compensate for such effects, by providing an adjustment to thecontrol signal CNTL, which can change from band to band.

Additional details of the IC 250 can be as described earlier.

FIG. 11B is a schematic diagram of an IC 260 according to anotherembodiment. The IC 260 includes the variable capacitor array 101 and thebias voltage generation circuit 104, which can be as described earlierwith respect to FIG. 6. The IC 260 further includes a capacitancecorrection circuit 261 and a capacitance detection circuit 262. Althoughthe illustrated IC 260 includes one variable capacitor array, the IC 260can be adapted to include additional variable capacitor arrays and/orother circuitry.

The illustrated capacitance correction circuit 261 receives the controlsignal CNTL, a calibration signal CAL, an error signal ERROR, andgenerates an adjusted control signal 263. The bias voltage generationcircuit 104 can use the adjusted control signal 263 to control thecapacitance of the variable capacitor array 101.

The calibration signal CAL can be used to initialize an arraycalibration, in which the capacitance correction circuit 261 sets theadjusted control signal 263 to a particular value and the capacitancedetection circuit 262 detects a capacitance of the variable capacitorarray 101. Additionally, the capacitance detection circuit 262 cangenerate the error signal ERROR based on a difference between anexpected capacitance of the array relative to a detected or observedcapacitance of the array.

The capacitance detection circuit 262 can detect the capacitance of thevariable capacitor array 101 in a variety of ways. For example, in oneembodiment, the capacitance detection circuit 262 can observe a currentfrom the array in response to an applied voltage with a controlled rateof change. Additionally, the observed current can be compared to areference current to generate the error signal ERROR. In anotherembodiment, the capacitance detection circuit 262 can observe a voltageacross the array in response to an applied current. Although twoexamples of capacitance detection circuits have been described, otherconfigurations are possible.

The error signal ERROR is provided to the capacitance correction circuit261, and can be used during normal operation of the IC 260 to adjust thecontrol signal CNTL. Configuring the IC 260 in this manner can aid incompensating for capacitance variation of the variable capacitor array101 associated with, for example, manufacturing variation.

Although FIG. 11B illustrates a configuration in which the capacitancecorrection circuit 261 directly detects a capacitance of the variablecapacitor array 101, the capacitance correction circuit 261 can also beconfigured to indirectly detect the capacitance of the variablecapacitor array 101. For example, the capacitance correction circuit 261can be configured to detect a capacitance of a replica of the variablecapacitor array 101 or a portion thereof. The capacitance of the replicamay track a capacitance variation of the variable capacitor array 101associated with processing. In such a configuration, the replica may bebiased in a variety of ways, including, for example, with one or morebias voltages having bias voltage levels selected for calibration.Detecting the capacitance of a replica can avoid loading the RF inputRF_(IN) and/or RF output RF_(OUT) with the capacitance correctioncircuit 261. However, such a configuration may also have increased areaand/or power consumption.

Although FIG. 11A and FIG. 11B illustrate two examples of capacitancecorrection schemes, the teachings herein can be used with otherconfigurations of capacitance correction. Additionally, in oneembodiment, a capacitance correction circuit is adapted to provide bothcapacitance correction based on band adjustment and capacitancecorrection based on a capacitance detected by a capacitance detectioncircuit.

Additional details of the IC 260 can be as described earlier.

FIG. 12 is a schematic diagram of a cross section of an IC 300 accordingto one embodiment. The IC 300 includes a support substrate 301, a buriedoxide (BOX) layer 302 over the support substrate 301, and a device layer303 over the BOX layer 302. The IC 300 further includes a substratecontact 304, which has been provided through the BOX layer 302 and thedevice layer 303 to provide electrical contact to the support substrate301.

The illustrated IC 300 further includes a first MOS capacitor 311 a anda second MOS capacitor 311 b. The first MOS capacitor 311 a includessource and drain regions 321 a, 321 b, respectively, which collectivelyoperate as the first MOS capacitor's cathode. The first MOS capacitor311 a further includes a first gate region 323 a, which is disposed overa first gate oxide region 322 a and which operates as the first MOScapacitor's anode. The second MOS capacitor 311 b includes source anddrain regions 321 c, 321 d, respectively, which collectively operate asthe second MOS capacitor's cathode. The second MOS capacitor 311 bfurther includes a second gate region 323 b, which is disposed over asecond gate oxide region 322 b and which operates as the second MOScapacitor's anode.

In the illustrated configuration, isolation regions have been used tohelp isolate the first and second MOS capacitors 311 a, 311 b from oneanother and from other structures of the IC 300. For example, the firstMOS capacitor 311 a is positioned between the first and second isolationregions 325 a, 325 b, and the second MOS capacitor 311 b is positionedbetween the second and third isolation regions 325 b, 325 c. In certainconfigurations, isolation regions can be used to surround a perimeter ofthe first and second MOS capacitors 311 a, 311 b when viewed from above.In one embodiment, the first and second MOS capacitors 311 a, 311 b areassociated with two different variable capacitor arrays.

Despite inclusion of the isolation regions 325 a-325 c, parasiticcircuit components can result in parasitic coupling between the firstand second MOS capacitors 311 a, 311 b. For example, a first parasiticcapacitor C_(PAR1) can be present between the cathode of the first MOScapacitor 311 a and the BOX layer 302 and/or the support substrate 301,and a second parasitic capacitor C_(PAR2) can be present between thecathode of the second MOS capacitor 311 b and the BOX layer 302 and/orthe support substrate 301. Additionally, the first and second parasiticcapacitors C_(PAR1), C_(PAR2) can be electrically connected to oneanother via a parasitic resistor R_(PAR), which can be associated with aresistance of the BOX layer 302 and/or the support substrate 301.

Although a capacitance of the first and second parasitic capacitorsC_(PAR1), C_(PAR2) can be relatively small and a resistance of theparasitic resistor R_(PAR) can be relatively large, parasitic couplingcan nevertheless be present between the first and second MOS capacitors311 a, 311 b. The parasitic coupling can lead to a degradation of theQ-factor of variable capacitor array that includes the first and secondMOS capacitors 311 a, 311 b.

The IC 300 has been annotated to include the substrate bias circuit 312,which can be used to control a voltage level of the support substrate301. For clarity of the figures, the substrate bias circuit 312 has beenillustrated schematically as a box. However, the substrate bias circuit312 can be fabricated on the IC 300.

In certain configurations, the substrate bias circuit 312 can be used tocontrol the voltage level of the support substrate 301 so as to increasea resistivity of the parasitic resistor R_(PARJ) relative to aconfiguration in which the support substrate 301 is unbiased orelectrically floating. For example, positive fixed charge in the BOXlayer 302 can attract electrons to an interface between the BOX layer302 and the support substrate 301, which can lead to an inversion oraccumulation layer at the interface. The inversion layer can have aresistance that is much smaller than a resistance of the BOX layer 302,and thus can serve to increase parasitic coupling between the first andsecond MOS capacitors 311 a, 311 b, which can degrade Q-factor.

By biasing the support substrate 301 using the substrate bias circuit312, the inversion layer at the interface between the support substrate301 and the BOX layer 302 can become depleted. Accordingly, a parasiticinteraction between the first and second MOS capacitors 311 a, 311 b candecrease, and a Q-factor of a variable capacitor array including thefirst and second MOS capacitors 311 a, 311 b can increase.

In one embodiment, the substrate bias circuit 312 is used to control thevoltage level of the support substrate 301 to a voltage level in therange of about 10 V to about 40 V. However, other voltage levels arepossible, including, for example, voltage levels associated with aparticular fabrication process.

Although FIG. 12 illustrates an IC fabricated using an SOI process, theteachings herein are applicable to ICs fabricated using any of a widerange of processing technologies, including, for example, CMOSprocesses.

FIG. 13A is a cross section of a MOS capacitor 350 according to oneembodiment. The MOS capacitor 350 includes source and drain regions 351a, 351 b, respectively, which collectively operate as the MOScapacitor's cathode. The MOS capacitor 350 further includes a gateregion 353, which operates as the MOS capacitor's anode.

As shown in FIG. 13A, the source and drain regions 351 a, 351 b aredisposed in the device layer 303. Additionally, the device layer 303 isdisposed over the BOX layer 302, which in turn is disposed over thesupport substrate 301. Additionally, the gate oxide region 352 isdisposed over the device layer 303, and the gate region 353 is disposedover the gate oxide region 352.

The illustrated MOS capacitor 350 includes a first halo or pocketimplant 355 a and a second halo or pocket implant 355 b. Certainmanufacturing processes include halo implantation to control transistorperformance for relatively small gate lengths, such as gate lengths of50 nm or less. For instance, halo implants can be used to limit anamount of diffusion of source and/or drain regions underneath edges of agate during high temperature processes associated with semiconductorfabrication. Absent inclusion of halo implants, source and drain regionsmay diffuse unduly close to one another. For example, the source anddrain regions may diffuse to provide a relatively short channel lengththat is susceptible to punch through at low drain-to-source voltage(V_(DS)) voltage levels.

The halo implants can include a doping polarity that is opposite that ofactive regions associated with source and drain regions. For example,when active regions associated with source and drain regions are n-type,the halo implants can be p-type. Additionally, when active regionsassociated with source and drain regions are p-type, the halo implantscan be n-type.

FIG. 13B is a cross section of a MOS capacitor 360 according to anotherembodiment. The MOS capacitor 360 of FIG. 13B is similar to the MOScapacitor 350 of FIG. 13A, except that the MOS capacitor 360 omits thefirst and second halo regions 355 a, 355 b of FIG. 13A.

Configuring the MOS capacitor 360 in this manner can result in arelatively large amount of diffusion of the source and drain regions 351a, 351 b. However, in the illustrated configuration, the source anddrain regions 351 a, 351 b are electrically connected to one another andoperate as a cathode. Thus, the MOS capacitor 360 can remain operableeven when the source and drain regions 351 a, 351 b diffuse relativelyclose to one another and/or diffuse into one another.

In certain embodiments, a MOS capacitor fabricated without halo orpocket implants can exhibit higher Q-factor and/or smaller capacitancevariation in the presence of RF signals relative to a configuration inwhich the pocket implants are included.

Although FIGS. 13A and 13B illustrate MOS capacitors in context of anSOI process, the teachings herein are applicable to MOS capacitorsfabricated using a wide range of processing technologies, including, forexample, CMOS processes.

Terms such as above, below, over and so on as used herein refer to adevice orientated as shown in the figures and should be construedaccordingly. It should also be appreciated that because regions within asemiconductor device are defined by doping different parts of asemiconductor material with differing impurities or differingconcentrations of impurities, discrete physical boundaries betweendifferent regions may not actually exist in the completed device butinstead regions may transition from one to another. Some boundaries asshown in the accompanying figures are of this type and are illustratedas abrupt structures merely for the assistance of the reader. In theembodiments described above, p-type regions can include a p-typesemiconductor material, such as boron, as a dopant. Further, n-typeregions can include an n-type semiconductor material, such asphosphorous, as a dopant. A skilled artisan will appreciate variousconcentrations of dopants in regions described above.

Applications

Some of the embodiments described above have provided examples inconnection with programmable duplexers. However, the principles andadvantages of the embodiments can be used in other suitable systems orapparatus.

CONCLUSION

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Likewise, the word “connected”, as generally used herein, refers to twoor more elements that may be either directly connected, or connected byway of one or more intermediate elements. Additionally, the words“herein,” “above,” “below,” and words of similar import, when used inthis application, shall refer to this application as a whole and not toany particular portions of this application. Where the context permits,words in the above Detailed Description using the singular or pluralnumber may also include the plural or singular number respectively. Theword “or” in reference to a list of two or more items, that word coversall of the following interpretations of the word: any of the items inthe list, all of the items in the list, and any combination of the itemsin the list.

Moreover, conditional language used herein, such as, among others,“can,” “could,” “might,” “can,” “e.g.,” “for example,” “such as” and thelike, unless specifically stated otherwise, or otherwise understoodwithin the context as used, is generally intended to convey that certainembodiments include, while other embodiments do not include, certainfeatures, elements and/or states. Thus, such conditional language is notgenerally intended to imply that features, elements and/or states are inany way required for one or more embodiments or that one or moreembodiments necessarily include logic for deciding, with or withoutauthor input or prompting, whether these features, elements and/orstates are included or are to be performed in any particular embodiment.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not only the system described above. The elements and acts ofthe various embodiments described above can be combined to providefurther embodiments.

While certain embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

What is claimed is:
 1. An integrated circuit comprising: a variablecapacitor array comprising: a radio frequency (RF) input; a RF output;and a plurality of metal oxide semiconductor (MOS) variable capacitorcells electrically connected in parallel with one another between the RFinput and the RF output, wherein the plurality of MOS variable capacitorcells comprises a first MOS variable capacitor cell comprising a firstMOS capacitor and a second MOS capacitor, wherein the first MOScapacitor and the second MOS capacitor are electrically connected inanti-parallel, wherein an anode of the first MOS capacitor iselectrically connected to a cathode of the second MOS capacitor, andwherein a cathode of the first MOS capacitor is electrically connectedto an anode of the second MOS capacitor; and a bias voltage generationcircuit configured to bias the plurality of MOS variable capacitor cellsincluding the first MOS variable capacitor cell to control a capacitanceof the variable capacitor array.
 2. The integrated circuit of claim 1,further comprising a balancing resistor electrically connected inparallel with the first MOS variable capacitor cell.
 3. The integratedcircuit of claim 1, wherein the integrated circuit does not include anyswitches along a signal path between the RF input and the RF outputthrough the variable capacitor array.
 4. The integrated circuit of claim1, wherein the first MOS capacitor comprises a source and a drainelectrically connected to one another to operate as the cathode, whereinthe first MOS capacitor further comprises a gate configured to operateas the anode, wherein the second MOS capacitor comprises a source and adrain electrically connected to one another to operate as the cathode,wherein the second MOS capacitor further comprises a gate configured tooperate as the anode.
 5. The integrated circuit of claim 4, wherein thefirst MOS capacitor does not include any pocket implants adjacent thesource or the drain of the first MOS capacitor.
 6. The integratedcircuit of claim 1, wherein the bias voltage generation circuit isconfigured to generate a plurality of bias voltages and to bias theplurality of MOS variable capacitor cells with the plurality of biasvoltages, wherein the bias voltage generation circuit is configured tocontrol each of the plurality of bias voltages to either a first biasvoltage level or to a second bias voltage level based on bit values of adigital control signal.
 7. The integrated circuit of claim 6, furthercomprising a capacitance correction circuit configured to receive anunadjusted digital control signal and to generate the digital controlsignal based on adjusting a value of the unadjusted digital controlsignal.
 8. The integrated circuit of claim 7, wherein the capacitancecorrection circuit is further configured to receive a band signalindicating a frequency band of operation, wherein the capacitancecorrection circuit further comprises a band selection circuit configuredto control an amount of adjustment of the capacitance correction circuitbased on the band signal.
 9. The integrated circuit of claim 7, furthercomprising a capacitance detection circuit configured to detect acapacitance of the variable capacitor array in response to activation ofa calibration signal, wherein the capacitance detection circuit isfurther configured to generate an error signal indicating a differencebetween the detected capacitance and an expected capacitance, wherein anamount of adjustment of the capacitance correction circuit is based onthe error signal.
 10. The integrated circuit of claim 1, furthercomprising: a support substrate; a buried oxide (BOX) layer adjacent thesupport substrate; a device layer comprising a plurality of sourceregions and a plurality of drain regions associated with the pluralityof MOS variable capacitor cells.
 11. The integrated circuit of claim 10,wherein the plurality of MOS variable capacitor cells comprise aplurality of n-type MOS capacitors, wherein the plurality of sourceregions comprises a first plurality of n-type regions and wherein theplurality of drain regions comprises a second plurality of n-typeregions.
 12. The integrated circuit of claim 10, further comprising: asubstrate contact through the BOX layer and the device layer; and asubstrate bias circuit electrically connected to the support substratevia the substrate contact, wherein the substrate bias circuit isconfigured to control a voltage level of the support substrate todeplete an inversion layer at an interface between the support substrateand the BOX layer.
 13. The integrated circuit of claim 1, wherein thebias voltage generation circuit is configured to bias the first MOScapacitor with a first bias voltage applied between the anode and thecathode of the first MOS capacitor, wherein the bias voltage generationcircuit is configured to control the first bias voltage to a voltagelevel selected from a discrete number of two or more bias voltagelevels.
 14. The integrated circuit of claim 13, wherein the bias voltagegeneration circuit is configured to control the first bias voltage toeither a first bias voltage level or to a second bias voltage level,wherein the first bias voltage level is configured to operate the firstMOS capacitor in an accumulation mode, wherein the second bias voltagelevel is configured to operate the first MOS capacitor in an inversionmode.
 15. The integrated circuit of claim 1, wherein the plurality ofMOS variable capacitor cells comprises between about 6 and about 12cells.
 16. The integrated circuit of claim 15, wherein the plurality ofMOS variable capacitor cells are scaled in size relative to one another.17. The integrated circuit of claim 1, wherein each of the plurality ofMOS variable capacitor cells comprises at least one pair of MOScapacitors electrically connected in anti-parallel.
 18. A method ofproviding a variable capacitance in a radio frequency (RF) system, themethod comprising: generating a plurality of bias voltages using a biasvoltage generation circuit; and biasing a plurality of metal oxidesemiconductor (MOS) variable capacitor cells of a variable capacitorarray using the plurality of bias voltages, wherein the plurality of MOSvariable capacitor cells are electrically connected in parallel with oneanother between an RF input and an RF output of the variable capacitorarray, wherein biasing the plurality of MOS variable capacitor cellscomprises biasing a first MOS variable capacitor cell comprising a firstMOS capacitor and a second MOS capacitor that are electrically connectedin anti-parallel, wherein an anode of the first MOS capacitor iselectrically connected to a cathode of the second MOS capacitor, andwherein a cathode of the first MOS capacitor is electrically connectedto an anode of the second MOS capacitor.
 19. A radio frequency (RF)system comprising: a first terminal; a second terminal a variablecapacitor array electrically connected in a signal path between thefirst terminal and the second terminal, wherein the variable capacitorarray comprises: a plurality of metal oxide semiconductor (MOS) variablecapacitor cells electrically connected in parallel with one another,wherein the plurality of MOS variable capacitor cells comprises a firstMOS variable capacitor cell comprising a first MOS capacitor and asecond MOS capacitor, wherein the first MOS capacitor and the second MOScapacitor are electrically connected in anti-parallel, wherein an anodeof the first MOS capacitor is electrically connected to a cathode of thesecond MOS capacitor, and wherein a cathode of the first MOS capacitoris electrically connected to an anode of the second MOS capacitor; and abias voltage generation circuit configured to bias the plurality of MOSvariable capacitor cells including the first MOS variable capacitor cellto control a capacitance of the variable capacitor array.
 20. The RFsystem of claim 19, further comprising an inductor electrically coupledto the variable capacitor array.